| PART |
Description |
Maker |
| BYX103G BYX101 BYX101G BYX102G BYX104G BYX103GT/R |
0.31 A, 10000 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
High-voltage soft-recovery controlled avalanche rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HAX2000-S HAX2500-S HAX500-S HAX1500-S HAX1000-S H |
Current Transducers HAX 500 to 2500-S 电流转换器HAX抛物面反00 2500 -
Current Transducers HAX 500 to 2500-S MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4V, RECTANGULAR, PANEL MOUNT
Current Transducers HAX 500 to 2500-S
|
LEM
|
| ZFSC-2-2500 |
Power Splitter/Combiner 2 Way-0 50楼? 10 to 2500 MHz
Power Splitter/Combiner 2 Way-0 50惟 10 to 2500 MHz
Power Splitter/Combiner 2 Way-0 50Ω 10 to 2500 MHz
|
Mini-Circuits
|
| ZAPD-2-252 |
Power Splitter/Combiner 2 Way-0 50Ω 5 to 2500 MHz
Power Splitter/Combiner 2 Way-0 50惟 5 to 2500 MHz
Power Splitter/Combiner 2 Way-0 50ヘ 5 to 2500 MHz
|
Mini-Circuits
|
| ZAPD-2-252-75 |
Power Splitter/Combiner 2 Way-0 75Ω 5 to 2500 MHz
Power Splitter/Combiner 2 Way-0 75惟 5 to 2500 MHz
Power Splitter/Combiner 2 Way-0 75ヘ 5 to 2500 MHz
|
Mini-Circuits
|
| HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
|
Hynix Semiconductor, Inc.
|
| UGB-10 |
2.3 A, 10000 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| UPA2520T1H-T2-AT |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| FDS6690SL86Z |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| HFA1135ML/883 |
OP-AMP, 10000 uV OFFSET-MAX, CQCC20
|
HARRIS SEMICONDUCTOR
|
